HM3307B mosfet equivalent, n-channel mosfet.
* VDSS=70V／VGSS=±25V／ID=114A
RDS(ON)=8mΩ(max.)@VGS=10V
* Low Dense Cell Design
* Reliable and Rugged
* Advanced trench process technology
Pin Descripti.
* Synchronous Rectification
* Power Management in Inverter System
Switching Time Test Circuit and Waveforms
HM3.
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